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PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
Rev. 02 -- 16 November 2009 Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1. Product overview Package NXP PDTD123EK PDTD123ES[1] PDTD123ET
[1]
Type number
PNP complement JEITA SC-59A SC-43A JEDEC TO-236 TO-92 TO-236AB PDTB123EK PDTB123ES PDTB123ET
SOT346 SOT54 SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
Built-in bias resistors Simplifies circuit design 500 mA output current capability Reduces component count Reduces pick and place costs 10 % resistor ratio tolerance
1.3 Applications
Digital application in automotive and industrial segments Controlling IC inputs Cost saving alternative for BC817 series in digital applications Switching loads
1.4 Quick reference data
Table 2. Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 1.54 0.9 Typ 2.2 1.0 Max 50 500 2.86 1.1 Unit V mA k
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
2. Pinning information
Table 3. Pin SOT54 1 2 3 input (base) output (collector) GND (emitter)
R1
Pinning Description Simplified outline Symbol
2 1 2 3
001aab347 006aaa145
1
R2
3
SOT54A 1 2 3 input (base) output (collector) GND (emitter)
R1
2 1 2 3
001aab348 006aaa145
1
R2
3
SOT54 variant 1 2 3 input (base) output (collector) GND (emitter)
R1
2 1 2 3
001aab447 006aaa145
1
R2
3
SOT23, SOT346 1 2 3 input (base) GND (emitter) output (collector)
1 2
006aaa144 sym007
3
R1
3 1
R2
2
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
2 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
3. Ordering information
Table 4. Ordering information Package Name PDTD123EK PDTD123ES[1] PDTD123ET
[1]
Type number
Description plastic surface mounted package; 3 leads
Version SOT346
SC-59A SC-43A -
plastic single-ended leaded (through hole) package; SOT54 3 leads plastic surface mounted package; 3 leads SOT23
Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5. Marking codes Marking code[1] E3 D123ES *7T Type number PDTD123EK PDTD123ES PDTD123ET
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO Ptot output current (DC) total power dissipation SOT346 SOT54 SOT23 Tstg Tj Tamb
[1]
Conditions open emitter open base open collector
Min -
Max 50 50 10 +12 -10 500 250 500 250 +150 150 +150
Unit V V V V V mA mW mW mW C C C
Tamb 25 C
[1]
-65 -65
storage temperature junction temperature ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
(c) NXP B.V. 2009. All rights reserved.
PDTD123E_SER_2
Product data sheet
Rev. 02 -- 16 November 2009
3 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
6. Thermal characteristics
Table 7. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient SOT346 SOT54 SOT23
[1]
Conditions in free air
[1]
Min
Typ
Max
Unit
-
-
500 250 500
K/W K/W K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO ICEO IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc Parameter Conditions Min 40 0.6 1.0 1.54 0.9 Typ 1.1 1.5 2.2 1.0 7 Max 100 100 0.5 2 0.3 1.8 2.0 2.86 1.1 pF V V V k Unit nA nA A mA collector-base cut-off VCB = 40 V; IE = 0 A current VCB = 50 V; IE = 0 A collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance VCB = 10 V; IE = ie = 0 A; f = 100 MHz VCE = 50 V; IB = 0 A VEB = 5 V; IC = 0 A VCE = 5 V; IC = 50 mA IC = 50 mA; IB = 2.5 mA VCE = 5 V; IC = 100 A VCE = 0.3 V; IC = 20 mA
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
4 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
103 hFE 102
006aaa318 (1) (2) (3)
10-1
006aaa319
VCEsat (V)
10
(1) (2) (3)
1
10-1 10-1
1
10
102 IC (mA)
103
10-2 1 10 IC (mA)
102
VCE = 5 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C
Fig 1.
DC current gain as a function of collector current; typical values
10
006aaa320
Fig 2.
Collector-emitter saturation voltage as a function of collector current; typical values
10
006aaa321
VI(on) (V)
(1)
VI(off) (V)
(1)
1
(2) (3)
1
(2) (3)
10-1 10-1
1
10
102 IC (mA)
103
10-1 10-1
1 IC (mA)
10
VCE = 0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C
VCE = 5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C
Fig 3.
On-state input voltage as a function of collector current; typical values
Fig 4.
Off-state input voltage as a function of collector current; typical values
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
5 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
8. Package outline
3.1 2.7 3 0.6 0.2 1.3 1.0 4.2 3.6 0.45 0.38
3.0 1.7 2.5 1.3 4.8 4.4 1 2 0.50 0.35 0.26 0.10 04-11-11 5.2 5.0 Dimensions in mm 14.5 12.7
0.48 0.40 1 2 2.54 3 1.27
1.9 Dimensions in mm
04-11-16
Fig 5.
Package outline SOT346 (SC-59A/TO-236)
Fig 6.
Package outline SOT54 (SC-43A/TO-92)
0.45 0.38
4.2 3.6
0.45 0.38 0.48 0.40 1
4.2 3.6
1.27
3 max
2.5 max 1
0.48 0.40 2 2.54 3 1.27
4.8 4.4
2 5.08 2.54 3 5.2 5.0 14.5 12.7 04-06-28 5.2 5.0 Dimensions in mm 14.5 12.7 4.8 4.4
Dimensions in mm
05-01-10
Fig 7.
Package outline SOT54A
Fig 8.
Package outline SOT54 variant
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 9.
Package outline SOT23 (TO-236AB)
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
6 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
9. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PDTD123EK PDTD123ES Package SOT346 SOT54 SOT54A SOT54 variant PDTD123ET
[1]
Description 4 mm pitch, 8 mm tape and reel bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch bulk, delta pinning 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 -215 5000 -412 -112 10000 -135 -116 -126 -235
SOT23
For further information and the availability of packing methods, see Section 12.
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
7 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
10. Revision history
Table 10. Revision history Release date 20091116 Data sheet status Product data sheet Change notice Supersedes PDTD123E_SER_1 Document ID PDTD123E_SER_2 Modifications:
*
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Product data sheet -
PDTD123E_SER_1
20050408
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
8 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
11. Legal information
11.1 Data sheet status
Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
11.2
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
11.3
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
11.4
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
12. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PDTD123E_SER_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 16 November 2009
9 of 10
NXP Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 k
13. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Contact information. . . . . . . . . . . . . . . . . . . . . . 9 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 November 2009 Document identifier: PDTD123E_SER_2

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